Theis, T. N. & Wong, H.-S. P. The top of Moore’s legislation: a brand new starting for info generation. Comput. Sci. Eng. 19, 41–50 (2017).
Schlom, D. G., Guha, S. & Datta, S. Gate oxides past SiO2. MRS Bull. 33, 1017–1025 (2008).
Ando, T. Final scaling of high-κ gate dielectrics: higher-κ or interfacial layer scavenging? Fabrics 5, 478–500 (2012).
Salahuddin, S., Ni, Ok. & Datta, S. The generation of hyper-scaling in electronics. Nat. Electron. 1, 442–450 (2018).
Shulaker, M. M. et al. 3-dimensional integration of nanotechnologies for computing and knowledge garage on a unmarried chip. Nature 547, 74–78 (2017).
Wong, H.-S. & Salahuddin, S. Reminiscence leads tips on how to higher computing. Nat. Nanotechnol. 10, 191–194 (2015).
Del Alamo, J. A. Nanometre-scale electronics with III–V compound semiconductors. Nature 479, 317–323 (2011).
Butler, S. Z. et al. Growth, demanding situations, and alternatives in two-dimensional fabrics past graphene. ACS Nano 7, 2898–2926 (2013).
Khan, A. I., Keshavarzi, A. & Datta, S. The way forward for ferroelectric field-effect transistor generation. Nat. Electron. 3, 588–597 (2020).
Dutta, S. et al. Monolithic 3-D integration of excessive staying power multi-bit ferroelectric FET for accelerating compute-in-memory. In 2020 IEEE World Electron Units Assembly (IEDM) 36.4.1–36.4.4 (IEEE, 2020).
Salahuddin, S. & Datta, S. Use of unfavourable capacitance to supply voltage amplification for low energy nanoscale gadgets. Nano Lett. 8, 405–410 (2008).
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U. & Böttger, U. Ferroelectricity in hafnium oxide skinny movies. Appl. Phys. Lett. 99, 102903 (2011).
Cheema, S. S. et al. Enhanced ferroelectricity in ultrathin movies grown immediately on silicon. Nature 580, 478–482 (2020).
Lee, H.-J. et al. Scale-free ferroelectricity brought about via flat phonon bands in HfO2. Science 369, 1343–1347 (2020).
Noheda, B. & Iniguez, J. A key piece of the ferroelectric hafnia puzzle. Science 369, 1300–1301 (2020).
Ando, T. et al. Working out mobility mechanisms in extraordinarily scaled HfO2 (EOT 0.42 nm) the usage of faraway interfacial layer scavenging method and Vt-tuning dipoles with gatefirst procedure. In 2009 IEEE World Electron Units Assembly (IEDM) 17.1 (IEEE, 2009).
Wong, H. & Iwai, H. At the scaling of subnanometer EOT gate dielectrics for final nano CMOS generation. Microelectron. Eng. 138, 57–76 (2015).
Narasimha, S. et al. 22 nm high-performance SOI generation that includes dual-embedded stressors, Epi-Plate Prime-Ok deep-trench embedded DRAM and self-aligned by way of 15LM BEOL. In 2012 World Electron Units Assembly 3.3.1–3.3.4 (IEEE, 2012).
Huang, J. Gate first high-k/metallic gate stacks with 0 SiOx interface attaining EOT=0.59 nm for 16 nm utility. In 2009 Symposium on VLSI Era 34–35 (IEEE, 2009).
Yeo, Y.-C., King, T.-J. & Hu, C. Direct tunneling leakage present and scalability of other gate dielectrics. Appl. Phys. Lett. 81, 2091–2093 (2002).
Kittel, C. Concept of antiferroelectric crystals. Phys. Rev. 82, 729–732 (1951).
Materlik, R., Künneth, C. & Kersch, A. The starting place of ferroelectricity in Hf1−xZrxO2: a computational investigation and a floor calories style. J. Appl. Phys. 117, 134109 (2015).
Reyes-Lillo, S. E., Garrity, Ok. F. & Rabe, Ok. M. Antiferroelectricity in thin-film ZrO2 from first ideas. Phys. Rev. B 90, 140103 (2014).
Qi, Y. & Rabe, Ok. M. Segment festival in HfO2 with carried out electrical subject from first ideas. Phys. Rev. B 102, 214108 (2020).
Lomenzo, P. D., Richter, C., Mikolajick, T. & Schroeder, U. Depolarization as driver in antiferroelectric hafnia and ferroelectric wake-up. ACS Appl. Electron. Mater. 2, 1583–1595 (2020).
Hoffmann, M. et al. Unveiling the double-well calories panorama in a ferroelectric layer. Nature 565, 464–467 (2019).
Íñiguez, J., Zubko, P., Luk’yanchuk, I. & Cano, A. Ferroelectric unfavourable capacitance. Nat. Rev. Mater. 4, 243–256 (2019).
Li, F., Zhang, S., Damjanovic, D., Chen, L.-Q. & Shrout, T. R. Native structural heterogeneity and electromechanical responses of ferroelectrics: studying from relaxor ferroelectrics. Adv. Funct. Mater. 28, 1801504 (2018).
Khan, A. et al. Experimental proof of ferroelectric unfavourable capacitance in nanoscale heterostructures. Appl. Phys. Lett. 99, 113501 (2011).
Yadav, A. Ok. et al. Spatially resolved steady-state unfavourable capacitance. Nature 565, 468–471 (2019).
Das, S. et al. Native unfavourable permittivity and topological segment transition in polar skyrmions. Nat. Mater. 20, 194–201 (2021).
Müller, J. et al. Ferroelectricity in easy binary ZrO2 and HfO2. Nano Lett. 12, 4318–4323 (2012).
Lakes, R. S., Lee, T., Bersie, A. & Wang, Y. C. Excessive damping in composite fabrics with negative-stiffness inclusions. Nature 410, 565–567 (2001).
Jaglinski, T., Kochmann, D., Stone, D. & Lakes, R. S. Composite fabrics with viscoelastic stiffness more than diamond. Science 315, 620–622 (2007).
Ni, Ok. et al. An identical oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric close to morphotropic segment boundary. In 2019 IEEE World Electron Units Assembly (IEDM) 7.4.1–7.4.4 (IEEE, 2019).
Budimir, M., Damjanovic, D. & Setter, N. Piezoelectric reaction and free-energy instability within the perovskite crystals BaTiO3, PbTiO3 and Pb(Zr, Ti)O3. Phys. Rev. B 73, 174106 (2006).
Noheda, B. et al. A monoclinic ferroelectric segment within the Pb(Zr1−xTix)O3 forged answer. Appl. Phys. Lett. 74, 2059–2061 (1999).
Schroeder, U. et al. Fresh development for acquiring the ferroelectric segment in hafnium oxide founded movies: have an effect on of oxygen and zirconium. Jpn. J. Appl. Phys. 58, SL0801 (2019).
Schlom, D. G. & Haeni, J. H. A thermodynamic method to deciding on choice gate dielectrics. MRS Bull. 27, 198–204 (2002).
Bersuker, G. et al. The impact of interfacial layer houses at the functionality of Hf-based gate stack gadgets. J. Appl. Phys. 100, 094108 (2006).
Liao, Y.-H. et al. Electrical field-induced permittivity enhancement in negative-capacitance FET. IEEE Trans. Electron Units 68, 1346–1351 (2021).
Ragnarsson, L.-Å. et al. Ultrathin EOT high-κ/metallic gate gadgets for long run applied sciences: demanding situations, achievements and views. Microelectron. Eng. 88, 1317–1322 (2011).
Chatterjee, Ok., Rosner, A. J. & Salahuddin, S. Intrinsic pace restrict of unfavourable capacitance transistors. IEEE Electron Tool Lett. 38, 1328–1330 (2017).
Kwon, D. et al. Reaction pace of unfavourable capacitance FinFETs. In 2018 IEEE Symposium on VLSI Era 49–50 (IEEE, 2018).
Pae, S. et al. Reliability characterization of 32 nm high-Ok and metal-gate good judgment transistor generation. In 2010 IEEE World Reliability Physics Symposium 287–292 (IEEE, 2010).
Mukhopadhyay, S. et al. Lure technology in IL and HK layers all over BTI/TDDB tension in scaled HKMG N and P MOSFETs and implications on tinv-scaling. In 2014 IEEE World Reliability Physics Symposium GD.3.1–GD.3.11 (IEEE, 2014).
Gao, W. et al. Room-temperature unfavourable capacitance in a ferroelectric–dielectric superlattice heterostructure. Nano Lett. 14, 5814–5819 (2014).
Zubko, P. et al. Unfavorable capacitance in multidomain ferroelectric superlattices. Nature 534, 524–528 (2016).
Wong, J. C. & Salahuddin, S. Unfavorable capacitance transistors. Proc. IEEE 107, 49–62 (2019).
Hsain, H. A., Lee, Y., Parsons, G. & Jones, J. L. Compositional dependence of crystallization temperatures and segment evolution in hafnia-zirconia (HfxZr1−x)O2 skinny movies. Appl. Phys. Lett. 116, 192901 (2020).
Lin, B.-T., Lu, Y.-W., Shieh, J. & Chen, M.-J. Induction of ferroelectricity in nanoscale ZrO2 skinny movies on Pt electrode with out post-annealing. J. Eur. Ceram. Soc. 37, 1135–1139 (2017).
Björck, M. & Andersson, G. GenX: an extensible X-ray reflectivity refinement program using differential evolution. J. Appl. Crystallogr. 40, 1174–1178 (2007).
Ilavsky, J. Nika: tool for two-dimensional knowledge relief. J. Appl. Crystallogr. 45, 324–328 (2012).
Park, M. H., Shimizu, T., Funakubo, H. & Schroeder, U. in Ferroelectricity in Doped Hafnium Oxide: Fabrics, Homes and Units (eds Schroeder, U. et al.) 193–216 (Woodhead, 2019).
Mehmood, F., Mikolajick, T. & Schroeder, U. Lanthanum doping brought about structural adjustments and their implications on ferroelectric houses of Hf1−xZrxO2 skinny movie. Appl. Phys. Lett. 117, 092902 (2020).
Mukundan, V. et al. Quantifying non-centrosymmetric orthorhombic segment fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 movies. Appl. Phys. Lett. 117, 262905 (2020).
Park, M. H. et al. Ferroelectricity and antiferroelectricity of doped skinny HfO2-based movies. Adv. Mater. 27, 1811–1831 (2015).
Lyu, J., Fina, I., Solanas, R., Fontcuberta, J. & Sánchez, F. Expansion window of ferroelectric epitaxial Hf0.5Zr0.5O2 skinny movies. ACS Appl. Electron. Mater. 1, 220–228 (2019).
Younger, A. T. et al. Variable linear polarization from an X-ray undulator. J. Synchrotron Radiat. 9, 270–274 (2002).
Jain, A. et al. The Fabrics Challenge: a fabrics genome method to accelerating fabrics innovation. APL Mater. 1, 011002 (2013).
Mathew, Ok. et al. Prime-throughput computational X-ray absorption spectroscopy. Sci. Information 5, 180151 (2018).
Cho, D.-Y., Jung, H.-S. & Hwang, C. S. Structural houses and digital constitution of HfO2–ZrO2 composite movies. Phys. Rev. B 82, 094104 (2010).
Park, M. H. & Hwang, C. S. Fluorite-structure antiferroelectrics. Rep. Prog. Phys. 82, 124502 (2019).
Yang, Ok. & Hu, C. MOS capacitance measurements for high-leakage skinny dielectrics. IEEE Trans. Electron Units 46, 1500–1501 (1999).
Changhwan C. et al. Fabrication of TaN-gated ultra-thin MOSFETS (EOT <1.0 nm) with HfO2 the usage of a singular oxygen scavenging procedure for sub 65 nm utility. In 2005 Symposium on VLSI Era 226–227 (IEEE, 2005).
Takahashi, M. et al. Gate-first processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm: interfacial layer formation via cycle-by-cycle deposition and annealing. In 2007 IEEE World Electron Units Assembly (IEDM) 523–526 (IEEE, 2007).
Mahapatra, S. (ed.) Basics of Bias Temperature Instability in MOS Transistors (Springer, 2016).
Kim, Y. J. et al. Time-dependent unfavourable capacitance results in Al2O3/BaTiO3 bilayers. Nano Lett. 16, 4375–4381 (2016).
Hoffmann, M. et al. Demonstration of high-speed hysteresis-free unfavourable capacitance in ferroelectric Hf0.5Zr0.5O2. In 2018 IEEE World Electron Units Assembly (IEDM) 31.6.1–31.6.4 (IEEE, 2018).
Kim, Ok. D. et al. Temporary unfavourable capacitance impact in atomic-layer-deposited Al2O3/Hf0.3Zr0.7O2 bilayer skinny movie. Adv. Funct. Mater. 29, 1808228 (2019).
Chen, L. Q. Segment-field means of segment transitions/area constructions in ferroelectric skinny movies: a assessment. J. Am. Ceram. Soc. 91, 1835–1844 (2008).
Lomenzo, P. D. et al. A Gibbs calories view of double hysteresis in ZrO2 and Si-doped HfO2. Appl. Phys. Lett. 117, 142904 (2020).
Synopsys Sentaurus Tool Consumer Information: Model O-2018.06 (Synopsys, 2018).
Park, J. Y. et al. A standpoint on semiconductor gadgets in response to fluorite-structured ferroelectrics from the fabrics–instrument integration standpoint. J. Appl. Phys. 128, 240904 (2020).
Hoffmann, M., Slesazeck, S., Schroeder, U. & Mikolajick, T. What’s subsequent for unfavourable capacitance electronics? Nat. Electron. 3, 504–506 (2020).
Hoffmann, M., Slesazeck, S. & Mikolajick, T. Growth and long run possibilities of unfavourable capacitance electronics: a fabrics standpoint. APL Mater. 9, 020902 (2021).
Mikolajick, T. et al. Subsequent technology ferroelectric fabrics for semiconductor procedure integration and their programs. J. Appl. Phys. 129, 100901 (2021).
Li, Y.-L. et al. Electric and reliability traits of FinFETs with high-okay gate stack and plasma remedies. IEEE Trans. Electron Units 68, 4–9 (2021).
Padmanabhan, R., Mohan, S., Morozumi, Y., Kaushal, S. & Bhat, N. Efficiency and reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT MIM capacitors. IEEE Trans. Electron Units 63, 3928–3935 (2016).
Shin, Y. et al. Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random entry reminiscence capacitor dielectrics. Appl. Phys. Lett. 98, 173505 (2011).
Mise, N. et al. Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and past. In 2009 IEEE World Electron Units Assembly (IEDM) 11.3.1–11.3.4 (IEEE, 2009).
Kil, D.-S. et al. Building of recent TiN/ZrO2/Al2O3/ZrO2/TiN capacitors extendable to 45nm technology DRAMs changing HfO2 founded dielectrics. In 2006 Symposium on VLSI Era 38–39 (IEEE, 2006).
Kim, S. Ok. & Popovici, M. Long term of dynamic random-access reminiscence as major reminiscence. MRS Bull. 43, 334–339 (2018).
Park, M. H. et al. A complete find out about at the mechanism of ferroelectric segment formation in hafnia-zirconia nanolaminates and superlattices. Appl. Phys. Rev. 6, 041403 (2019).
Weeks, S. L., Buddy, A., Narasimhan, V. Ok., Littau, Ok. A. & Chiang, T. Engineering of ferroelectric HfO2–ZrO2 nanolaminates. ACS Appl. Mater. Interfaces 9, 13440–13447 (2017).
Riedel, S., Polakowski, P. & Müller, J. A thermally tough and thickness impartial ferroelectric segment in laminated hafnium zirconium oxide. AIP Adv. 6, 095123 (2016).
Osada, M. & Sasaki, T. The upward thrust of 2D dielectrics/ferroelectrics. APL Mater. 7, 120902 (2019).
IRDS. Government abstract. In The World Roadmap for Units and Methods: 2020 (IEEE, 2020); http://irds.ieee.org.
Park, H. W., Roh, J., Lee, Y. B. & Hwang, C. S. Modeling of unfavourable capacitance in ferroelectric skinny Ffilms. Adv. Mater. 31, 1805266 (2019).
Park, M. H. et al. Morphotropic segment boundary of Hf1−xZrxO2 skinny movies for dynamic random entry recollections. ACS Appl. Mater. Interfaces 10, 42666–42673 (2018).
Das, D. & Jeon, S. Prime-κ HfxZr1−xO2 ferroelectric insulator by using excessive drive anneal. IEEE Trans. Electron Units 67, 2489–2494 (2020).
Kim, S. et al. Approach to succeed in the morphotropic segment boundary in HfxZr1−xO2 via electrical subject biking for DRAM cellular capacitor programs. IEEE Electron Tool Lett. 42, 517–520 (2021).
Kashir, A. & Hwang, H. Ferroelectric and dielectric houses of Hf0.5Zr0.5O2 skinny movie close to morphotropic segment boundary. Phys. Standing Solidi A 218, 2000819 (2021).
Appleby, D. J. R. et al. Experimental remark of unfavourable capacitance in ferroelectrics at room temperature. Nano Lett. 14, 3864–3868 (2014).
#Ultrathin #ferroic #HfO2ZrO2 #superlattice #gate #stack #complex #transistors
